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Home > Other Testing Service > Reliabilities Experiment > ESD/Latch up Test
ESD/Latch up Test

ESD测试(HBM/MM):
        随着IC制作工艺的不断演进,芯片的制程尺寸逐渐缩小,现在最新技术已到纳米阶段,但由此而来的IC对静电放电(ESD)的敏感度也随之提升许多。为了减少组件因ESD损伤而造成客户退货及其它损失,组件的ESD防护能力也就成了提升可靠度的重要指标。

        ESD据产生的原因和对IC放电的方式不同,主要分为以下三种:
        a、HBM。人体放电模式(human-body model)
        b、MM。机器放电模式(machine model)
        c、CDM。组件充电模式(charged-device model)